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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

Name: IPD082N10N3 TO252 Ic Integrated Circuit N Channel Mosfet Transistor
Brand: INFINEON
Price: 1 USD

Brand Name : INFINEON

Model Number : IPD082N10N3

Place of Origin : original

MOQ : 1pcs

Payment Terms : D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 57830pcs

Delivery Time : 3

Packaging Details : 4000

Stock : 8000+

Price : Negotiate

quality： : Brand new unused

Package / box : TO-252

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ISO9001.pdf

IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters:
Application:
Used as a high-voltage and high-power load switch
Used as a switch for converters and regulators
Conclusion:
High voltage capability: Vds=100V
Low conduction resistance: Rds (on)=8.2m Ω (typ.)
Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.)
High temperature performance: can operate at temperatures up to 175 ℃
Complies with RoHS directives and lead-free requirements
Parameters:
Vds (drain source voltage): 100V
Vgs (gate source voltage): ± 20V
Id (drain current): 80A
Rds (on) (conduction resistance): 8.2m Ω (typ.)
Qg (gate charge): 135nC (typ.)
Td (on) (start delay time): 16ns (typ.)
Td (off) (shutdown delay time): 60ns (typ.)
Tj (junction temperature): 175 ℃
Complies with RoHS directives and lead-free requirements.

Product Technical Specifications

EU RoHS	Compliant with Exemption聽
ECCN (US)	EAR99
Part Status	Unconfirmed
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Unknown
PPAP	Unknown
Product Category	Power MOSFET
Configuration	Single
Process Technology	OptiMOS 3
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	卤20
Maximum Gate Threshold Voltage (V)	3.5
Maximum Continuous Drain Current (A)	80
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	8.2@10V
Typical Gate Charge @ Vgs (nC)	42@10V
Typical Gate Charge @ 10V (nC)	42
Typical Input Capacitance @ Vds (pF)	2990@50V
Maximum Power Dissipation (mW)	125000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	42
Typical Turn-Off Delay Time (ns)	31
Typical Turn-On Delay Time (ns)	18
Minimum Operating Temperature (掳C)	-55
Maximum Operating Temperature (掳C)	175
Packaging	Tape and Reel
Mounting	Surface Mount
Package Height	2.41(Max)
Package Width	6.22(Max)
Package Length	6.73(Max)
PCB changed	2
Tab	Tab
Standard Package Name	TO-252
Supplier Package	DPAK
Pin Count	3
Lead Shape	Gull-wing

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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor Images

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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

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